The capacity to dependably change the instructions of magnetic placement in products, a procedure called magnetization changing, is understood to be main to the performance of a lot of memory tools. One well-known technique to accomplish requires the production of a rotational pressure (i.e., torque) on electron rotates through an electrical current; a physical impact called spin-orbit torque (SOT).
发布者：Dr.Durant，转转请注明出处：https://robotalks.cn/next-generation-memory-tungsten-based-sot-mram-achieves-nanosecond-switching-and-low-power-data-storage/
