MILPITAS, Calif.–( COMPANY CORD)– #teledynehirel– Teledyne HiRel Semiconductors reveals the accessibility of its Gallium Nitride (GaN) high-power RF button, version TDSW84230EP. This button supplies high optimal power and is created to change Positive-Intrinsic-Negative (PIN) diode-based RF Switches over generally made use of in RF front ends of a number of today’s tactical and armed forces interaction radio systems. Established utilizing a wide-bandgap GaN High Electron Flexibility Transistor (HEMT) procedure, this button supplies an extremely high
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