MILPITAS, Calif.–( ORGANIZATION CORD)– #teledynehirel– Teledyne HiRel Semiconductors reveals the schedule of its Gallium Nitride (GaN) high-power RF button, version TDSW84230EP. This button supplies high optimal power and is created to change Positive-Intrinsic-Negative (PIN) diode-based RF Switches over frequently utilized in RF front ends of most of today’s tactical and army interaction radio systems. Established utilizing a wide-bandgap GaN High Electron Wheelchair Transistor (HEMT) procedure, this button supplies an extremely high
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