KAWASAKI, Japan–(ORGANIZATION CORD)– Toshiba’s brand-new bare die 1200V SiC MOSFET for vehicle grip inverters with a brand-new framework provides both reduced On-resistance and high dependability.
发布者：Dr.Durant，转转请注明出处：https://robotalks.cn/toshiba-starts-test-sample-shipments-of-a-bare-die-1200v-sic-mosfet-with-low-on-resistance-and-high-reliability-for-use-in-automotive-traction-inverters/
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